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RB715Z
Diodes
Schottky barrier diode
RB715Z
Applications General rectification External dimensions (Unit : mm)
1.20.1 0.320.05 (3) 0.130.05
Land size figure
0.4 0.45
Features 1) Extra small power mold type. (VMD3) 2) Low VF 3) High reliability
0.80.1
1.20.1
00.1
0.4 0.5 0.45
(1) 0.220.05 0.4
(2) 0.220.05 0.4 0.15Ma 0.50.05
0.80.05
0.8
VMD3
0.50.05
0.37
0.15Max
0.20.1
00.1
ROHM : VMD3 dot (year week factory)
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.550.1 0.05 1.750.1 0.30.1
0.3
Structure
3.50.05
8.00.2
1.400.1
4.00.1
1.00.2 0
2.80.05
2.80.1
1.00.1
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature
Rating of per diode
Symbol VRM
VR
Limits 40
30
Unit V V mA mA C C
IO IFSM Tj Tstg
30 200 125 -40 to +125
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 0.37 0.5 Unit V A IF=1mA VR=30V Conditions
1.15
1/3
RB715Z
Diodes
Electrical characteristic curves
100
FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA)
1000 Ta=125 Ta=125 Ta=75 Ta=25 Ta=-25 100 10 1 0.1 0.01 0.001 0 500 1000 1500 0 10 20 30
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
f=1MHz
10 Ta=75
1 Ta=-25 0.1 Ta=25 0.01
1
0.1 0 10 20 30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
300
FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA)
1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.083nA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10 Ta=25 VR=10V n=30pcs 9 8 7 6 5 4 3 2 1 0 AVE:2.52pF Ta=25 f=1MHz VR=0V n=10pcs
290 280 270 260 250
Ta=25 IF=1mA n=30pcs
0.9
AVE:267.4mV
VF DIPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 1cyc 8.3ms
20
Ifsm
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
Ifsm t
15
15
8.3ms 8.3ms 1cyc
10
10
5 AVE:7.30kV 0
5
0 1
IFSM DISPERSION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
10000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board IM=1mA IF=10mA
0.04 Per chip DC
FORWARD POWER DISSIPATION:Pf(W)
0.003 Per chip D=1/2 Sin(180)
REVERSE POWER DISSIPATION:PR (W)
1000
1ms
time
0.03
300us
Rth(j-a)
0.002 D=1/2
0.02
DC 0.001 Sin(180)
100
Rth(j-c)
0.01
10 0.001
0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05
0 0 10 20 30
AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
2/3
RB715Z
Diodes
0.1 Per chip
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
0.1
VR D=t/T VR=20V Tj=125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08 0.06 0.04 0.02 0 0 25 50 DC D=1/2
0A 0V
Io t T
Per chip 0.08 0.06 0.04 0.02 0
0A 0V
Io t T VR D=t/T VR=20V Tj=125
DC D=1/2
Sin(180)
Sin(180)
75
100
125
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve (Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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